Министерство науки и высшего образования Российской Федерации
ФЕДЕРАЛЬНОЕ ГОСУДАРСТВЕННОЕ АВТОНОМНОЕ ОБРАЗОВАТЕЛЬНОЕ УЧРЕЖДЕНИЕ ВЫСШЕГО ОБРАЗОВАНИЯ
“САНКТ-ПЕТЕРБУРГСКИЙ НАЦИОНАЛЬНЫЙ ИССЛЕДОВАТЕЛЬСКИЙ
УНИВЕРСИТЕТ ИНФОРМАЦИОННЫХ ТЕХНОЛОГИЙ,
МЕХАНИКИ И ОПТИКИ”
ВЫПУСКНАЯ КВАЛИФИКАЦИОННАЯ РАБОТА
МОДЫ ШЕПЧУЩЕЙ ГАЛЕРЕИ ЭЛЕКТРОНОВ В КВАНТОВОЙ ТОЧКЕ
Автор
Рамезанпур Шахаб
_______________
(Фамилия, Имя, Отчество)
Направление подготовки (специальность)
(Подпись)
12.04.03
(код, наименование)
Фотоника и оптоинформатика
Квалификация
магистр
(бакалавр, магистр)
Руководитель ВКР Богданов А.А. к.ф.-м.н.
(Фамилия, И., О., ученое звание, степень)
______________
(Подпись)
К защите допустить
Руководитель ОП Белов П.А., д.ф.-м.н. _____________
(Фамилия, И.О., ученое звание, степень) (Подпись)
―_____‖__________________ 20 ____г.
Санкт-Петербург, 2019 г.
Студент Рамезанпур Ш.
Группа
Z4240
Факультет
ФТФ
(Фамилия, И. О.)
Направленность (профиль), специализация
«Метаматериалы»
_______________________________________________________________________________
Консультант (ы):
а) ____________________________________________________________ _____________
(Фамилия, И., О., ученое звание, степень)
(Подпись)
б) ______________________________________________________________ _____________
(Фамилия, И., О., ученое звание, степень)
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ВКР принята ―____‖________________________20 ____г.
Оригинальность ВКР ______________%
ВКР выполнена с оценкой _______________________________
Дата защиты ―____‖________________________20 ____г.
Секретарь ГЭК ______________________________________________ __________________
(ФИО)
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Листов хранения ___________________________________
Демонстрационных материалов/Чертежей хранения _________________________________
Ministry of Science and Higher Education
FEDERAL STATE AUTONOMOUS EDUCATIONAL INSTITUTION OF HIGHER PROFESSIONAL EDUCATION
“Saint Petersburg State University
of Information Technologies,
Mechanics and Optics”
GRADUATION THESIS
WHISPERING GALLERY MODES OF ELECTRONS IN QUANTUM DOT
Author
Ramezanpour Shahab
_______________
(full name)
Subject area
(signature)
12.04.03 Photonics and optoinformatics
(code, name of program track)
____________________________________________________________________________
Degree level
master
(Bachelor, Master)
Thesis supervisor Bogdanov A.A., PhD
(surname, initials, academic title, degree)
_____________
(signature)
Approved for defense
Head of program Belov P.A., PhD, D.Sc _____________
(surname, initials, academic title, degree)
(signature)
―_____‖__________________ 20 ____
St. Petersburg, 2019
Student
Ramezanpour Sh.
Group
Z4240
Faculty
PhE
(Surname, initials)
Subject area, program/major
«Metatmaterials»
_______________________________________________________________________________
Consultant(s):
a) ____________________________________________________________ _____________
(surname, initials, academic title, degree)
(signature)
b) ______________________________________________________________ _____________
(surname, initials, academic title, degree)
(signature)
Thesis received ―____‖________________________20 ____
Originality of thesis: ______________%
Thesis completed with the grade: _______________________________
Date of defense ―____‖________________________20 ____
Secretary of State Exam Commission_________________________
(ФИО)
__________________
(подпись)
Number of pages ___________________________________
Number of supplementary materials/Blueprints _________________________________
6
Introduction-----------------------------------------------------------------------------------
8
1 Overview of the research field-------------------------------------------------------
10
1.1 Energy Spectra of a few Electrons Lateral Quantum Dot------------------
10
1.1.1 Shell Filling and Spin Effect-------------------------------------------
10
1.1.2 Direct Coulomb and Exchange Interaction---------------------------
12
1.1.3 Capacitance-Voltage Traces of InAs Dot-----------------------------
13
1.1.4 Perturbation Approach for the Coulomb interactions between
electrons-------------------------------------------------------------------
15
1.2 Creating Whispering Gallery Modes-------------------------------------------
16
1.2.1 Graphene-------------------------------------------------------------------
16
1.2.2 Oligothiophene nano-rings---------------------------------------------
18
1.3 WGM as Superpersistent Current----------------------------------------------
19
1.4 Fabrication of Lateral Quantum Dot-------------------------------------------
20
1.5 Wigner Localization and Conductance Anomalies-------------------------
21
2 Theoretical approach-------------------------------------------------------------------
23
2.1 Schrodinger equation in effective mass approximation------------------- ---
23
2.2 Evaluating the Effect of Coulomb energy in energy spectra----------------
24
2.3 Spin effect of the electrons in Coulomb interaction--------------------------
25
2.4 Fock-operator----------------------------------------------------------------------
27
3 Methods and Results--------------------------------------------------------------------
30
3.1 4 meV QD--------------------------------------------------------------------------
30
3.1.1 Energy Spectra------------------------------------------------------------
30
3.1.2 Wavefunction-------------------------------------------------------------
31
3.1.3 WGMs---------------------------------------------------------------------
31
3.2 2 meV QD--------------------------------------------------------------------------
32
3.2.1 Energy Spectra and Wavefunctions-----------------------------------
32
3.3 Effect of Coulomb Interaction--------------------------------------------------
34
3.4 Variational Method (Hartree-Fock approach)----------------------------------
37
7
3.5 Magnetic Field Effect--------------------------------------------------------------
41
3.6. Experimental Result---------------------------------------------------------------
44
3.7 Surface Modes in Lateral QD---------------------------------------------------
45
3.7.1 WGMs---------------------------------------------------------------------
45
3.7.2 Resonance across the Height--------------------------------------------
46
3.8 Perturbation-------------------------------------------------------------------------
48
3.8.1 Lateral QD-----------------------------------------------------------------
48
3.8.2 Spherical QD---------------------------------------------------------------
49
3.8.3 Triangular QD-------------------------------------------------------------
50
Conclusion-------------------------------------------------------------------------------------
52
References-------------------------------------------------------------------------------------
53
8
Introduction
Semiconductor Quantum Dot (QD) can be modeled as an artificial atom, and reveal
discrete energy levels similar to an atom. It is shown in refs. [1-2] that by measuring
current versus gate voltage, a QD has similar properties of atoms, as filling the shell
structures in a 2D harmonic oscillator. It is discussed that electrons tend to fill the shell
with parallel spin (ferromagnetic filling), according to the Hund's law. However, by
applying a magnetic field, degenerate energy levels with plus/minus angular momentum
would be split (Zeeman effect), which can change ground states of the QD. Besides, by
introducing direct and exchange coulomb interaction, filling of the shells can be
antiparallel (antiferromagnetic).
It is shown in ref. [3] that energy levels of InAs QD are as s -, p - and d -shell by
using high-resolution capacitance spectroscopy and detecting maximums of the
capacitance. Furthermore, it shows that applying magnetic field causes intermixing of
p-
and d -shells. In order to model interband spectroscopy, in ref. [4], Coulomb
interaction between electrons and also electrons and holes are calculated and treated as a
perturbation, where confining potential is considered parabolic and two-dimensional.
Quantum Dots can support states with high angular momentum. These states behave
as Whispering Gallery Modes (WGMs) in optical resonator. The distribution of
wavefunction associated to WGM is confined to the edges of QD, which can have
applications in electronic lenses and resonators. It is shown in ref. [5] that WGM can be
created in Graphene by an induction from scanning tunneling probe. The size of the
circular trap can be tuned by the voltage of the back-gated Graphene device. It is shown
in ref. [6] that WGM can be created in Oligothiophene nano-rings which can act as
electronic resonator. It is shown in ref. [7] that WGMs can be used as a superpersistent
currents in Dirac materials which has application in Qubits and Topological Insulators
(TI) [8].
In a few electron QD, electrons can create a crystalization called Wigner Molecules
(WM). In these dots, excited electrons can reveal different modes including WGM.
Structural and optical properties of InP/GaInP QDs are studied in ref. [9], while in [1011], it is shown that WGMs can be in the resonance of Wigner Molecules (WMs)
ground state. Furthermore, zero-bias conductance anomalies (having conductance at zeo
9
bias voltage) in Quantum Point Contact (QPC) is explained by Wigner localization and
alternating equilibrium and non-equilibrium of Kondo screening of different spin states
[12-13].
Therefore, evaluating the energy spectra of the QD is challenging, since many
parameters can affect it such as Coulomb interaction between the electrons, shape of the
QD, magnetic field, etc. Furthermore, literature usually consider lateral QD with a zero
thickness, however, our calculation reveals that even very small thickness of the QD can
have significant effect on the energy spectra. Besides, due to the application of some of
the modes in the QD such as lasing, lenses, electronic resonator, ..., we study WGMs in
the lateral QD and its energy levels.
We evaluate the energy spectra of QD with both perturbation approach and
variational method. Although, perturbation approach is simpler, it suits well for our
structure, since we consider the QD which contains a few amount of electrons in the
ground state and one or two electrons in the excited state. Although, the variational
method is much more time-consuming, it takes into account the effect of the
wavefunctions on each other. We could attain almost the same result from these two
methods.
This thesis shows that the dimension of the QD including its height has a
critical effect on the QD's energy spectra, therefore, it cannot be considered as a 2D
harmonic oscillator. The Coulomb interaction is comparable to the energy of interband
transition which cause intermixing energy bands even for zero magnetic field. It shows
resonances along the height of the lateral dot which are quite unusual, and studies
perturbation and topological effects on surface states in these dots and also in spherical
and triangular ones.
10
1 OVERVIEW OF THE RESEARCH FIELD
1.1 Energy Spectra of a Few Electrons Lateral Quantum Dot
1.1.1 Shell Filling and Spin Effect
Reference [1] represents that adding an electron to a semiconductor quantum dot,
―addition energy‖ is required which is similar to the real atom. However, this addition
energy is greater than the interband energy, due to the coulomb interaction between the
electrons. Vertical quantum dots are like a disk with a diameter around 10 times of its
thickness. They can be modeled by two dimensional (2D) harmonic oscillators, since
their lateral potential can be considered to have a cylindrical symmetry with soft walls.
The artificial shells can be filled completely by the number of electrons 2, 6, 12, ...,
which are considered as magic numbers. The addition energy is usually larger when the
electron numbers are equal to the magic numbers. To study the magnetic field
dependence, at a sufficiently small magnetic field (B< 0.4 T), spin filling obeys Hund‘s
rule, while at higher magnetic fields (B> 0.4 T), the filling of states are with successive
spin-up and spin-down.
Figure 1(a) shows the current at drain voltage V 150 V as a function of gate
voltage Vg for a dot with diameter D 0.5 m , where the picks are related to adding one
electron to the dot. Figure 1(b) depicts the addition energy versus the electrons number
N, for two different devices.
11
Figure 1 - (a) current versus gate voltage at B 0 T for a D 0.5 m dot. (b) Addition
energy versus electron number for two different dots with D 0.5 m and 0.44 m [1]
The energy spectrum in a B field for a 2D harmonic oscillator can be obtained
analytically as:
1
1
En,l (2n | | 1) ( c2 02 )1/2
4
2
c
with a radial quantum number n ( 0,1, 2, ...) and angular momentum quantum number
( 0, 1, 2,...) , while
0 is the electrostatic confinement energy and
c is the
cyclotron energy. Figure. 2(a) shows En,l versus B calculated for 0 3meV . A singleparticle state with a positive angular momentum shifts lower while the state with a
negative one shifts higher energies, respectively, with increasing B. Figure. 2(b) shows
the B-field dependence of the fifth, sixth, and seventh current peaks. From this figure,
one can observe that the fifth and sixth peaks form a pair. At 1.3 T , the maximum and
minimum of the sixth and seventh peaks, respectively, can be attributed to the crossing
of the third and fourth energy curves at 1.3 T in Fig. 2(a).
12
Figure 2 - (a) Calculated single-particle energy versus magnetic field for a parabolic
potential with 0 3meV . (b) Evolution of the fifth, sixth, and seventh current peaks
with magnetic field for D 0.5m dot [1]
1.1.2 Direct Coulomb and Exchange Interaction [2]
By applying magnetic field, ref. [2] shows that spin-configurations can be
explained in terms of two-electron singlet and triplet states.
Figure. 3(b) shows two, spin-degenerate single-particle states with energies Ea and
Eb crossing each other at B = B0. For two electrons we can distinguish four possible
configurations with either total spin S = 0 (spin-singlet) or S = 1 (spin-triplet). The
corresponding energies, Ui(2, S) for i = 1 to 4, are given by: U1(2, 0) = 2Ea + Caa (two
elctrons in Ea state with different spins),U2(2, 0) = 2Eb + Cbb (two electrons in Eb state
with different spins), U3(2, 1) = Ea+Eb+Cab−|Kab| (one electron in Ea and another in Eb
13
state with same spin), U4(2, 0) = Ea +Eb+Cab (one electron in Ea and another in Eb state
with different spin), where Cij and Kij are direct and exchange Coulomb interaction,
respectively.
Figure 3 - (a) Scanning electron micrograph of the semiconductor quantum dot device.
(b) Schematic diagram of two single particle states with energies Ea and Eb crossing
each other at a magnetic field B = B0 [2]
1.1.3 Capacitance-Voltage Traces of InAs Dot
Figure 4 shows the essential layer sequence and a sketch of the conduction band
edge [3]:
Figure 4 - (a) Layer sequence of the devices. The InAs dots are distributed within the
plane sandwiched between two GaAs layers. (b) Sketch of the conduction-band edge Ec
with respect to the Fermi level EF along the growth direction for gate voltages at which
no electrons are in the InAs dots. The indicated distances define the lever arm according
to ttot /tb (in our case equal 7) which converts voltage into energy differences
14
Figure 5(a) shows the capacitance versus gate voltage for different applied
magnetic fields between 0 and 23 T. It shows two degenerate maxima and four
degenerate maxima, which can be attributed to the s and p shells, respectively. Figure
5(b) shows the dependence of these maximas to the magnetic field, which depicts that
the maximas related to the s shell is almost unaffected (because of zero angular
momentum), while two of the maximas related to the p shell decrease (because of
positive angular momentum) and two of them increase (due to the negative angular
momentum).
Figure 5 - (a) Differential capacitance of the layered structure at different magnetic
fields (b) Magnetic-field dependence of each maxima [3]
15
1.1.4 Perturbation Approach for the Coulomb interactions between electrons
In magnetic field, single particle energies have the following energy levels:
'
s,
1
c
2
1
p 2 ' c
2
d 3 ' c
p 2 '
d0 3 '
(1)
d 3 ' c
where
' 2 c2 / 4
(2)
is effective frequency and c eB / m * is cyclotron frequency. For instance the s-state
wavefunction is
se
1
le
exp(r 2 / 2le2 )
(3)
where le is effective length of electrons
le
m*
(4)
while for holes effetive length is:
lh
m h
*
h
(5)
16
On the other hand, direct and exchange Coulomb interaction can be obtained from
Eqs. (6) and (7), respectively:
Eij
Eij
e2
4 0 r
e2
4 0 r
| ie (r1 ) |2 | ej (r2 ) |2
| r1 r2 |
dr1dr2
ie (r1 )* ej (r2 )* ie (r2 ) ej (r1 )
| r1 r2 |
(6)
dr1dr2
(7)
For example, direct Coulomb interaction between two electrons in s-state is
calculated:
Eij
e2
1
4 0 r
2 le
(8)
The ground state energy for N electrons can then be obtained from:
EN E sp ( N ) E c ( N ) 1 NeVg
(9)
where Esp(N) is the sum of the single-particle energies, EC(N) the matrix element of the
Coulomb interaction, and -λ-1NeVg expresses the electrostatic energy due to the electric
field between gate and back contact.
1.2 Creating Whispering Gallery Modes
1.2.1 Graphene
In [5], Whispering Gallery Mode (WGM) is created in Graphene by creating pn
junction, induced by a scanning tunneling probe (Fig. 6). The size of the resonator can
be tuned by back-gated graphene device. It demonstrates an entirely different approach,
inspired by the peculiar acoustic phenomena in whispering galleries. This type of
resonators can be used in quantum electron-optics such as electronic lenses and
resonators. Therefore, scanning tunneling microscopy (STM) probe is utilized for both
probing electronic states and also creating pn junction which serves as confining
potential for electrons.
Two types of WGM are detected in the structure (Fig. 7). First type is called
WGM‖ which occur in conventional energy states ε𝜈=μ0+𝑒𝑉b. However, the tip bias
variation causes the Fermi level beneath the tip to move through system energy levels
ε𝜈, which create another type of WGM (WGM‘) at Fermi energy level ε𝜈=μ0.
17
Figure 6 – (A) The rings are induced by the STM tip voltage bias (𝑉b) and back-gate
voltage (𝑉g) is adjusted to reverse the carrier polarity beneath the tip relative to the
ambient polarity. The cavity radius and the local carrier density are tunable by both Vb
and Vg. (B) Spatial profile of WGM resonances. The confinement is stronger for the
larger angular momentum m values [5]
Figure 7 – (A) Differential tunneling conductance, 𝑑𝐼/𝑑𝑉b, map for a single-layer
graphene device as a function of sample bias, 𝑉b and back gate voltage, 𝑉g. (B)
18
Interference features in 𝑑𝐼/𝑑𝑉𝑏 calculated from the relativistic Dirac model. The
boundaries of WGM‘ (WGM‖) regions are marked by dashed (dotted) white lines [5]
1.2.2 Oligothiophene Nano-Rings
In Whispering gallery Modes (WGMs), such as the dome of St Paul‘s Cathedral
in London, waves travel along a curved path. For closed-loop galleries, wave
resonances appear when an integer number of wavelengths equals the perimeter of the
resonator. To have WGM, the coherence length of the waves must exceed the perimeter
of the resonator, and the walls must efficiently reflect the waves. Reference [6] creates
WGM in Oligothiophene nano-rings as shown in Fig. 8. This figure also contains wire
topology excitement, which has application in atomic wire.
Figure 8 – (Color online) (a) Topographic STM image (I = 100 pA and Vsample = 0.1 V,
6.6 × 2.4 nm2) and (b) constant height differential conductance spectra (set point: I = 5
pA and Vsample = 1 V) of a linear-[12]-thiophene. The grey and black spectra correspond
to two positions of the tip on top of the wire (see grey and black arrows in (a)). Green
lines are Gaussian function fits. (c) to (f) are constant height conductance maps acquired
19
at voltages corresponding to maxima in (b). The same data were acquired for a cyclo[12]-thiophene: (g) topographic STM image (2.8 × 2.8 nm2), (h) constant height
differential conductance spectra acquired on top of the wire, and (i) to (k) constant
height conductance maps acquired at voltages corresponding to maxima in (h)
1.3 WGM as Superpersistent Current
In the presence of random scatterings, e.g., due to classical chaos, Persistent Currents
(PCs), one of the most intriguing manifestations of the Aharonov-Bohm (AB) effect,
vanish for Schrӧdinger particles [7]. However, relativistic Dirac quantum AB rings
threaded by a magnetic flux are extremely robust (superpersistent currents (SPCs)). A
striking finding is that the SPCs can be attributed to a robust type of relativistic quantum
states, i.e., Dirac whispering gallery modes (WGMs) that carry large angular momenta
and travel along the boundaries and can potentially be the base for a new class of
relativistic qubit systems.
By examining the eigenstates, we note that, for low energy levels, the
Schrödinger particle is strongly localized throughout the domain, as shown in Figs. 9(a–
c), since asymmetry in the domain geometry cause mixing angular momentum states
and leading to localization of lower states in the entire domain region and vanishing AB
oscillations. However, the Dirac fermion typically travels around the ring‘s boundaries,
forming relativistic WGMs that persist under irregular boundary scattering due to chaos
and are magnetic flux dependent, as shown in Fig. 9(d–f).
Figure 9 – Probability distribution of the 10th eigenstate for (a–c) nonrelativistic and
(d–f) relativistic AB chaotic billiard, for different chaos degee [7]
20
1.4 Fabrication of Lateral Quantum Dot
Due to the vast application of self-organized InP quantum dots (QDs), especially in
laser and single photon-source (SPS), they have been widely studied in the recent
decades [9]. Self-organized InP quantum dots (QDs) grows on Gax In1x P lattice-matched
to GaAs substrates (further denoted as InP/ GaInP QDs). Interestingly, InP/GaInP
QDs have been shown to reveal Wigner Molecule (WM) states which make them an
ideal candidate to be used in nano-electronics, quantum computing devices. Although,
WM states could be observed in InSb nanowires, and carbon nanotubes. To this end,
control of the QD‘s optical and structural properties is essential. For laser and SPS
applications, the control of the properties of the QDs with sizes 40–70 nm have done,
but not for larger InP/GaInP QDs (>100 nm) which is required for the optimization of
WM structures.
In [9], the QD sample structure is as follows: 500 μm in direction [1 0 0] GaAs
substrate misoriented by 2° or 6° towards the [1 1 0] direction, 50 nm thick GaAs buffer
layer, 50 nm Gax In1x P latticed matched to the GaAs grown at 725 °C, seven monolayers
of InP at 725 °C to form the QDs, and a 60 nm Gax In1x P cap layer grown at either 650 or
725 °C. Representative plan-view Transmission Electron Microscopy (TEM) images of
the four samples are shown in figure 10 (a) as well as the lateral size probability density
functions (PDFs). The QD lateral sizes range from ~100–200 nm. The PDFs peaked at
140, 160, 100, and 130 nm for samples i, ii, iii and iv, respectively.
21
Figure 10 – Structural data of the samples i, ii, iii and iv: plan-view TEM images with
the extracted lateral dot size probability distribution functions—(a) and cross-sectional
TEM images and EDX scans—(b). The amount of Gax (Gax In1 x P) for each line scan
(along the vertical lines indicated) is shown to the image‘s right [9]
1.5 Wigner Localization and Conductance Anomalies
A Quantum Point Contact (QPC) is a constriction in the transverse direction which
create a resistance for the electron motion where with applying voltage across the
constriction, current can be induced. Hence, the QPC shows quantized conductance for
different gate voltage, however, a shoulder like curve appear near the conductance
0.7G0=0.7*2e2/h which cannot be explained by single particle approach. This anamoly
is called ‗0.7 anomaly‘ or zero-bias peak called ‗zero-bias anomaly‘ (ZBA).
Reference [12] observes repetitive splitting of the zero-bias anaomy by
changing the distance of the scanning gate microscope tip, also appearing of 0.7
anomaly, simultaneously (Fig. 11).
22
Figure 11 – Transport measurements. Base temperature is 20 mK. (a) Electron
micrograph of the QPC gates. Scale bar, 300 nm. (b) Differential conductance G at zero
bias versus split-gate voltage Vgate. The 0.7 anomaly is visible below the first plateau.
(c) Differential conductance G versus source-drain bias for different gate voltage Vgate
from -1.08 to -0.96 V
This behavior is explained as existing of Wigner localization containing charges
with different parities, in which spin states in the channel shows alternating equilibrium
and nonequilibrium Kondo screenings (Kondo effect can be explained as hybridization
of localized electrons to the conduction electrons at low temperature which creates a
narrow band gap).
This behavior can be interpreted in terms of alternating equilibrium and
nonequilibrium Kondo screenings of different spin states localized in the channel. These
alternating Kondo effects point towards the presence of a Wigner crystal containing
several charges with different parities.
23
2 THEORETICAL APPROACH
2.1 Schrodinger Equation in Effective Mass Approximation
Schrodinger equation in effective mass approximation can be written as:
2
1
.( ) V E
me
2
(10)
Regarding that, our structure is symmetric in azimuthal ( ) direction, by
separation of variables, we can write wavefuntion as:
(r, z)( )
On the other hand, in cylinderical coordinates, the operator .(
.(
(11)
1
) is:
me
1
1 1
1
1 2
)
( r ) (
)
me
r r me r z me z me r 2 2
(12)
By inserting Eqs. (11) and (12) into (10):
where
1 1
1
h 2 2
(
r
)
(
)
V E
2
2
2
r
r
m
r
z
m
z
8
m
r
e
e
e
h2
8 2
(13)
h
. Deividing both sides of this equation by
gives:
2
me r 2
me r 2
h2 1 1 1
1
h 2 1 2
2
(
r
)
(
)
m
r
(
V
E
)
e
8 2 r r me r
z me z
8 2 2
(14)
Therefore, we can equate both side of the above equation to a constant like
h2 2
2 l which gives two independent equations as:
8
1 2
l 2
2
(15)
and
me r 2
h2 1 1 1
1
h2 2
2
(
r
)
(
)
m
r
(
V
E
)
l
e
8 2 r r me r
z me z
8 2
(16)
The solution of Eq. (15) is in the form:
exp(il )
(17)
24
where due to the periodic condition ( 2 ) ( ) , l , the principle quantum number,
should be integer.
Furthermore, multiplying both sides of Eq. (16) with
and arranging the
me r 2
terms gives:
h2
8 2
1
1
h2
h2 l 2
(
)
(
)
(
V
) E
z me z 8 2 me r r
8 2 me r 2
r me r
(18)
which is in the form of a coefficient form partial differential equation (PDE):
.(cu u ) au u dau
(19)
with:
c
h2
8 2 me
; r
h2
8 2 me r
; a V
h2 l 2
8 2 me r 2
; da 1 ; E
(20)
while other coefficients are zero.
We note that in Eq. (19), (
, ) is considered.
r z
2.2 Evaluating the Effect of Coulomb Energy in Energy Spectra
To calculate Coulomb interaction between two electrons, the wavefunctions
associated with these two electrons can be written as:
(r1, r2 ) c11 (r1 ) 2 (r2 ) c21 (r2 ) 2 (r1 )
(21)
where 1 (r ) and 2 (r ) are wavefunctions of two states, while r1 and r2 are positions of
the electrons. The quantity | c1 |2 is the propabibility of the electron with state 1 (r ) being
in the position r1 and electron with state 2 (r ) being in the position r2 . The similar
definition stands for | c2 |2 . Therefore, c1 and c2
| c1 |2 | c2 |2 1
are equal to
1
, regarding that
2
and | c1 |2 | c2 |2 . Since electrons are fermions, the wavefunction of these
two electrons should be antisymmetrized, hence, we choose c1
Therefore, from Eq. (21):
1
1
and c2 .
2
2
25
(r1 , r2 )
1
1
1 (r1 ) 2 (r2 ) 1 (r2 ) 2 (r1 )
2
2
(22)
In fact, Eq. (22) is a representation of slater determinant, since this determinant can be
2 2
decomposed to
determinants, and for studying two electrons, only the related
2 2
determinant would be kept and other components would be considered zero.
On the other hand, the potential energy between two-charge distribution can be
calculated from:
dV
dq1dq2
4 0 r r12
1
(23)
where
dq1dq2 e2 | (r1 , r2 ) |2 dv1dv2 e2 (r1 , r2 )* (r1 , r2 )dv1dv2
(24)
Therefore,
V
e2
4 0 r
* (r1 , r2 ) (r1 , r2 )
r12
dv1dv2
(25)
Inserting (r1, r2 ) from Eq. (22), one can obtain:
V
| 1 (r1 ) |2 | 2 (r2 ) |2
1* (r1 ) 2* (r2 ) 1 (r2 ) 2 (r1 )
dv
dv
dv1dv2
1
2
4 0 r
r12
r12
e2
(26)
where the first term:
Vd
| 1 (r1 ) |2 | 2 ( r2 ) |2
dv1dv2
4 0 r
r12
e2
(27)
is called direct coulomb energy and
Ve
1* (r1 ) 2* (r2 ) 1 (r2 ) 2 (r1 )
r12
dv1dv2
is exchange coulomb energy.
2.3 Spin effect of the electrons in Coulomb interaction
Let's define the wavefunction of two correlated electrons as:
(28)
26
(r1, 1, r2 , 2 ) (r1, r2 ) (1, 2 )
(29)
where r1 and r2 are spatial parameters and 1 and 2 are spin parameters. The function
(r1, 1, r2 , 2 ) should be antisymmetrized. If the spins of the electrons are same, (1, 2 )
is symmetrized, therefore, (r1 , r2 ) should be antisymmetrized (as Eq. 22). Therefore, by
inserting this wavefunction in the Coulomb energy (Eq. 25), the exchange part of
Coulomb energy would be negative. Vice versa, for different spin, (r1 , r2 ) should be
symmetrized and exchange coulomb interaction is positive.
However, according to another approach, we assume the wavefunction of an
electron as:
(r, ) (r ) ()
(30)
Let's calculate the notation i | hˆ | j :
i | hˆ | j drdi* (r , )hˆ j (r , )
(31)
Inserting Eq. (30) into (31):
i | hˆ | j drdi* (r ) i* ( )hˆ j (r ) j ( )
(32)
Separating spin function and spatial function gives:
i | hˆ | j d i* ( ) j ( ) dri (r )hˆ j (r )
(33)
For same spin i j
d
*
i
( ) j ( ) 1
(34)
and for different spin, the integral is zero.
Therefore, to calculate single particle energy, we can write
i | hˆ | i d i* ( ) i ( ) dri (r )hˆ j (r )
(35)
i | hˆ | i dri (r )hˆ j (r )
(36)
Therefore,
For exchange coulomb inetraction, we can write:
27
[ i j | j i ] dr1d1dr2 d2 i* (r1 , 1 ) j ( r1 , 1 )
1 *
j ( r2 , 2 ) i ( r2 , 2 )
r12
(37)
With separating spin part and spatial parts:
1
[ i j | j i ] d1 i* (1 ) j (1 ) d2 *j (2 ) i (2 ) dr1dr2i* ( r1 ) j ( r1 ) *j (r2 )i (r2 )
r12
(38)
Therefore, for different spin i j , the integral is zero. However, for direct
coulomb interaction, we can write:
1
[ i i | j j ] d1 i* (1 ) i (1 ) d2 *j (2 ) j (2 ) dr1dr2i* ( r1 )i ( r1 ) *j (r2 ) j (r2 )
r12
(39)
Regardless of same or different spins, we can write:
[ i i | j j ] dr1dr2i* (r1 )i (r1 )
1 *
j (r2 ) j (r2 )
r12
(40)
According to this approach, for same spin, exchange coulomb energy is negative,
and for different spin, it is zero. In our calculations, we have used the second approach.
2.4 Fock-operator
The energy associated to an electronic system can be defined as:
E HF i | h | i
i
1
[ i i | j j ] [ i j | j i ]
2 ij
(41)
where the first, second and third terms are single particle energy, direct coulomb energy
and exchange coulomb energy. The coefficient 1/ 2 is due to the fact that in the sum of
electron interactions, each electrons has considered twice. However, currently we do not
care about coefficients and sign, since later, we can adjust them regarding the number
and spin of the electrons in the orbitals.
Let's assume wavefunction of orbital i th ( i ) changes a bit as:
i i i
(42)
Langragian of this orbital can be defined as:
L{i } E HF {i } ij ( i | j ij )
ij
(43)
28
In fact Eq. (43) investigate the orthogonality of the orbitals. The unknown
coefficients (Langragian multiplier) ij can be found by differentiating of Eq. (43) and
equating it to zero.
The differentiation of the Langragian defined in Eq. (43) is:
L{i } E HF {i } ij i | j
(44)
ij
where the differentiation of the term i | j is:
i | j i | j i | j
(45)
and differentiation of E HF from Eq. (41) is:
E HF i | hˆ | i i | hˆ | i
i
1
[i i | i i ] [ ii | i i ] [ i i | i i ] [i i | ii ]
2 ij
1
[i j | j i ] [ i j | j i ] [ i j | j i ] [ i j | ji ]
2 ij
(46)
If we consider the integral form of Eq. (46), we can observe that some terms in
this equation are equal to each other, and it can written as:
E HF i | hˆ | i i | hˆ | i
i
[ i i | i i ] [ i i | i i ] [ i j | j i ] [ i j | j i ]
ij
ij
(47)
By inserting Eqs. (45) and (47) into (44), we can write:
L{ i } i | hˆ | i i | hˆ | i
i
[ i i | i i ] [ i i | i i ] [ i j | j i ] [ i j | j i ]
ij
(48)
ij
ij ( i | j i | j )
ij
Some terms of Eq. (48) is complex conjugate of each other, therefore, this
equation can be written as:
29
L{i } i | hˆ | i [i i | i i ] [i j | j i ] ij i | j complex.conjugate (49)
i
ij
ij
ij
We can write Eq. (49) in the integral form as:
1
1
ˆ
h(r1 ) i (r1 ) i (r1 ) dr2 *j (r2 ) j (r2 ) j (r1 ) dr2 *j ( r2 ) i ( r2 )
r12
r12
j
j
L{i } dr1i* (r1 )
c.c 0
i
ij j (r1 )
j
(50)
In order that Eq. (50) being equal to zero, the expression in the bracket should be
zero:
1
1
hˆ(r1 ) i (r1 ) dr2 *j (r2 ) j (r2 ) i (r1 ) dr2 *j (r2 ) i (r2 ) j (r1 ) ij j (r1 )
r12
r12
j
j
j
(51)
In Eq. (51), we can define operators Jˆ j and Kˆ j which are related to the direct and
exchange coulomb interaction, respectively:
1
Jˆ j i (r1 ) dr2 *j (r2 ) j (r2 ) i (r1 )
r12
1
Kˆ j i (r1 ) dr2 *j (r2 ) i (r2 ) j (r1 )
r12
(52)
(53)
Therfore, Eq. (51) can be written in the operator form as:
ˆ
h Jˆ j Kˆ j i (r1 ) ij j (r1 )
j
j
j
(54)
We choose Langragian multiplier ij to be diagonal ( ij 0 ; i j ), therefore, Eq.
(54) can be written as:
ˆ
h Jˆ j Kˆ j i (r1 ) ii i (r1 )
j
j
(55)
30
3 METHODS AND RESULTS
3.1 4 meV QD
3.1.1 Energy Spectra
The eigenvalues (eigenenergies) and eigenfunctions of Eq. (19) with coefficients
defined in Eq. (20) can be evaluated by Finite Element Method by Comsol software,
"Coefficient Form PDE" section. To obtain eigenenergies in eV unit, we can divide h
and me in Eq. (20) by the charge of electron e . The Quantum Dot (QD) and surrounding
areas are InP and GaAs with effective mass of electrons 0.08me and 0.067me , respectively
while the applied potential on the QD is 0 and on the surrounding area is 0.2 eV .
Therefore, In Comsol, two PDE are defined, one of them for QD and another one for
sorrounding area. Although the height of QD is too small, it should be considered as a
3D structure in order to achieve a more accurate results, since some energy degeneracy
would be created due to the non-zero height of the QD.
In order to achieve a precise result, a dense meshing is considered for the structure as
shown in Fig. 12 (a). Figure 12 (b) shows energy spectrum of a QD for which its
dimensions is adjusted in order to achieve 4 meV energy splitting between two lowest
energy levels, s and p .
Figure 12 - (a) Meshing. (b) Energy Spectrum for QD with 4 meV s-p energy splitting
31
This figure shows some energy degeneracy for each azimuthal number ( m ).
3.1.2 Wavefunction
The wavefuncions of the QD (Figure 13) shows that these degeneracy is due to
the changing the quantum number associated to the height of the QD ( z -direction). It
starts between 5th and 6th eigenvalues and the splitting increases with increasing the
azimuthal number.
Figure 13 - Eigenfunctions of 4 meV QD for azimuthal numbers m 0
3.1.3 WGMs
The probability densities ( | |2 ) of some of the Whispering Gallery Modes
(WGMs) is also depicted in Figure 15.
32
Figure 14 - Probability densities of WGMs for m 2 to m 7
3.2 2 meV QD
3.2.1 Energy Spectra and Wavefunctions
With changing the size of the QD, its energy spectrum can be manipulated.
Figure 15, shows energy spectrum of a QD for which its size is adjusted in order to
create 2 meV energy splitting between s & p -states. It shows that energy spectrum is
denser comparing to 4 meV QD, and its wavefunctions depicted in Fig. 16 shows that
33
energy degeneracy starts between 4th and 5th eigenvalues (instead of 5th and 6th in 4
meV QD).
Figure 15 - Energy spectrum of 2 meV QD
34
Figure 16 - Eigenfunctions of 2meV QD for azimuthal numbers m 0
3.3 Effect of Coulomb Interaction
We assume a QD which contain 5 electrons in ground state and also one electorn
in the excited state or 4 electrons in the ground state and 2 electrons in the excited state.
Therefore, to evaluate Coulomb interaction, different arrangements are considered (Fig.
18).
py
px
wgmy
wgmx
py
s
px
s
(a)
(b)
wgmy
wgmx
py
px
wgmy
wgmx
py
px
s
s
(c)
(d)
Figure 17 - Different arrangement of 6 electrons in the QD
In Fig. 17a, coulomb energy of one of the electron in px orbital is
C1 px px 2 px p y ( px p y )e 2spx ( spx )e
(56)
where px px is direct coulomb interaction between two electrons in px state, which can
be evaluated from Eq. (27). The term px py is direct Coulomb interaction between one
35
electron in px state and two electrons in p y state (therefore, it has coefficient 2) and
( px p y )e is
exchange Coulomb interaction between these electrons, since the electron
under study in px has same spin with one of the electrons in ( px has dependent as
cos(m ) while p y has sin(m ) ). The same condition is considered for the other states. In
Fig. 18b, coulomb energy of the electron in wgmx is
C2 px wgmx ( px wgmx )e 2 p y wgmx ( p y wgmx )e 2swgmx (swgmx )e
(57)
The calculated Coulomb energy difference between Figs. 18a and 18b is
C1 C2 5.93 meV .
If we consider the arrangemnet of Fig. 18c (excited electron in wgmy ), the
Coulomb energy difference between Figs. 18c and 18a is calculated 5.7 meV .
For two electron in
wgm
orbital (Fig. 18d), the coulomb energy difference
between Figs. 18d and 18a is calculated 15.15 meV , therefore, we can expect that each of
the electrons in
wgm has
about 15.15 / 2 7.58 meV lower energy than the electron in
p
orbital.
With excitation of an electron, a s - hole would be created in the structure, hence,
the effect of exiton energy should also be added in the Coulomb interaction. The s -hole
wavefunction is obtained by considereng effective mass of hole m 0.6me .
The exiton energy beween s -hole and an electron in px orbital is calculated
sh px 7.75 meV while for wgmx (m 2) , it is sh wgmx 6.3 meV , therefore, the value
7.75 6.3 1.45 meV should also be added to the coulomb energy difference between
Figs. 18a and 18b.
For the other states, the difference of the Coulomb interaction can be calculated,
similarly. We assume first eigenstates of azimuthal number m 2, 3, ... as
wgm ,
the
second eigenstates of m 0,1, 2,... as xII , and third eigenstates of m 0,1, 2,... as xIII .
Figure 19a shows, energy spectra for one electron in the excited state (Fig. 18b) with
taking into account the Coulomb interaction between the electrons, while in Fig. 19b
exitonic energy is also included.
36
(a)
(b)
Figure 18 - Energy spectra for one electron in the excited state: (a) without excitonic
energy. (b) with exitonic energy
Fig. 19 is related to the energy spectra for 2 electrons in the excited state (Fig. 17d).
37
(a)
(b)
Figure 19 - Energy spectra for 2 electron in the excited state: (a) without exitonic
energy. (b) with exitonic energy
3.4 Variational Method (Hartree-Fock Approach)
In this section we evaluate the result with variational (Hartree-Fock (HF)) method.
Energy of an electron in state i can be calculated from Fock-operator as:
38
ˆ
h Jˆ j Kˆ j i (r1 ) ii i (r1 )
j
j
(58)
The general concept is that the shape of orbitals deviate a bit from their single
particle wavefunctions due to the interaction between the orbitals. Therefore, the new
wavefunction can be written as a linear combination of all the orbitals (in order to take
into account their interactions) and estimate their new energy and wavefunction by
variational method.
Equation (58) is an eigenvalue problem which gives wavefuncion and energy of i
th orbital. First, we should choose eigenbasis, and write wavefunction of the orbitals as
a linear combination of these eigenbasis. It is more convenient to use single particle
wavefunctions as the eigenbasis, since they are currently available. If we consider single
particle wavefunction, equivalent to atomic orbital and the wavefunction under study i ,
equivalent to molecular orbital, this method is called Molecular Orbital as a Linear
Combination of Atomic Orbital (MO-LCAO) method.
For our structure, we assume ground states have the wavefunction as their single
particle states, but the excited state, as a linear combination of the single particle
wavefunctions. For instance, for WGM with azimuthal number m 2 we can write:
WGM c1s c2 p y c3 px c4 wgmx
(59)
By inserting Eq. (59), into (58):
ˆ
h Jˆ j Kˆ j c1s(r1 ) c2 p y (r1 ) c3 px (r1 ) c4 wgm(r1 ) ii c1s (r1 ) c2 p y (r1 ) c3 p x (r1 ) c4 wgm(r1 )
j
j
(60)
where, ii is the energy of orbital WGM . In this equation j 1, 2,3 is related to the
orbitals s, py , px , respectively. The operators J1 and K1 are related to the direct and
exchange coulomb interation of orbital s(r ) and WGM (r ) , and we can write:
39
J1 WGM (r1 ) 2 dr2 .s (r2 )* s (r2 )
K1 WGM (r1 ) dr2 .s (r2 )* s (r1 )
1
WGM (r1 )
r12
1
WGM (r2 )
r12
(61)
(62)
In Eq. (61), the coefficient 2 is due to the direct coulomb effect of 2 electrons in s
orbital on WGM orbital. The minus sign in Eq. (62) is due to the one electron in s(r )
orbital which has same spin with the electron in WGM (r ) orbital.
For the coulomb operator of p y (r ) orbital on WGM (r ) , we can write:
J 2 WGM (r1 ) 2 dr2 . p y (r2 )* p y (r2 )
1
WGM (r1 )
r12
1
Kˆ 2 WGM (r1 ) dr2 . p y (r2 )* p y (r1 ) WGM (r2 )
r12
(63)
(64)
The coulomb operator of px (r ) orbital on WGM (r ) is:
1
Jˆ3 WGM (r1 ) dr2 . px (r2 )* px (r2 ) WGM (r1 )
r12
K 3 WGM (r1 ) dr2 . px (r2 )* px (r1 )
1
WGM (r2 )
r12
(65)
(66)
regarding that there is one electron in px (r ) orbital with the same spin as the electron in
WGM (r ) orbital.
Since there are four unknown parameters c1, c2 , c3 , c4 , four equations are needed to
calculate them. According to Roothan method, first equation can be obtained by
multiplying both sides of Eq. (60) by s(r1 ) | (multiplying it by s* (r1 ) and taking integral
with respect to r1 ). Similarly, second, third and fourth equation can be obtained by
multiplying it by p y (r1 ) | , px (r1 ) | , wgm(r1 ) | , respectively. From these four equations,
40
we can arrange the terms with respect to the unknown coefficients c1, c2 , c3 , c4 , which
yields the matrix form equation as:
F11
F
21
F31
F41
F12
F22
F32
F42
F13
F23
F33
F43
F14 c1
S11 S12
S
F24 c2
S 22
ii 21
S31 S32
F34 c3
F44 c4
S 41 S 42
S13
S 23
S33
S 43
S14 c1
S 24 c2
S34 c3
S 44 c4
(67)
where due to the large expressions, it is shown parametrically. Equation (67) can be
written as:
S 1 FC ii C
(68)
which is an eigenvalue problem. The eigenvalues and eigenvectors of the matrix S 1 F
gives ii and C , respectively (we note that if we choose the ground states as a linear
combination of the eigenbasis either, then the operators would also contain the unknown
coefficients C , therefore the problem would be Self-Consistent Field (SCF), since the
operators depend on the eigenfunctions, however, our case is not self-consistent).
The calculated eigenvalues and eigenvectors are according to:
E1 53.6070 ; V1 0.1494, 0, 0.0149, 0.9887
E2 44.6968 ; V2 0.9868, 0, 0.0631, 0.1490
E3 46.0224 ; V3 0.0022, 0, 1, 0.0068,
E4 48.2944 ; V4 0, 1, 0, 0
(69)
where we choose the first eigenvalue and eigenvector, since c4 (coefficient of wgmx in
Eq. (59)) is near one.
It may also be reasonable to investigate five eigenbasis:
WGM c1s c2 p y c3 px c4 wgmx c5 wgmy
in order to observe the difference of energy levels of WGM x and WGM y .
(70)
41
The calculated eigenvalues and eigenvectors are as below:
E1 44.6968 ; V1 0.9868, 0, 0.0631, 0.1490, 0
E2 46.0224 ; V2 0.0022, 0, 1, 0.0068, 0
E3 53.6070 ; V3 0.1494, 0, 0.0149, 0.9887, 0
E4 53.3365 ; V4 0, 0.0455, 0, 0, 0.999
E5 48.2840 ; V5 0, 0.999, 0, 0, 0.0455
(71)
where third and fourth set is associated to the WGM x and WGM y , since c4 and c5 are
near one, respectively, which shows a difference of energy about 0.3meV .
To evaluate the energy level of Px in the arrangement of the electrons according to the
Fig. 18a, we can consider three eigenbasis as:
Px c1s c2 p y c3 px
(72)
which yields
E1 47.6672 ; V1 .9948, 0, 0.1019
E2 54.8473 ; V2 0.0775, 0, 0.997
E3 49.3702 ; V3 0, 1, 0
(73)
where second set with energy of 54.85 meV is related to the Px which is about 1.5 meV
higher than WGM x and 1.3 meV higher than WGM y . This result is corresponding to the
previously evaluated energy spectra in Fig. 19(a).
3.5 Magnetic Field Effect
Fig. 21 shows eigenergies of QD for 4.1 meV s - p states splitting, where quantum
numbers (n, l ) related to the radial and azimuthal number are specified for each of the
levels, while Table I shows the corresponding energies for each state.
42
eigenergies (eV)
4,0
3,2
2,4
3,1
2,3
3,0
2,2
2,1
2,0
1,4
0,8
0,7
1,3
0,6
1,2
0,4
1,1
1,0
1,6
1,5
0,1
0,2
0,5
0,3
0,0
azimuthal number (m)
Figure 20 - Energy spectra for 4.1meV QD
Table 1 - Values corresponding to the Fig. 21
(0,0): 0.019
(0,3): 0.032
(1,3): 0.045
(0,6): 0.049
(4,0): 0.07
(0,1): 0.023
(2,0): 0.039
(0,5): 0.04
(3,1): 0.06
(3,2): 0.068
(1,0): 0.028
(1,2): 0.039
(3,0): 0.052
(2,3): 0.059
(2,4): 0.066
(0,2): 0.028
(0,4): 0.038
(2,2): 0.052
(1,5): 0.058
(1,6): 0.064
(1,1): 0.033
(2,1): 0.045
(1,4): 0.051
(0,7): 0.055
(0,8): 0.061
For 2D harmonic oscillator the energy levels can be determined from:
En,l (2n | l | 1) 0
(74)
The energy levels of our system, near to the s & p states can be somehow
equivalent to the 2D harmonic oscillator energy levels. To this end, we introduce a
detuning parameter n,l as:
En,l (2n | l | 1)( 0 n,l )
(75)
The detuning parameter for each energy level is obtaind as following:
The energy levels of s - and
p-
states are considered to be 0 and 2 0 , respectively,
with zero detuning parameters, where 0 4.1meV is s & p energy splitting:
E0,0 0
; 0,0 0
E0,1 2 0
; 0,1 0
(76)
43
For a specific energy level like E0,2 , we can write the energy difference E0,2 E0,0
from Eqs. (75)-(76) as:
E0,2 E0,0 3( 0 0,2 ) 0 8.537meV
(77)
Therefore, from Eq. (77), we can calculate:
0,2 0.11meV
(78)
Similarly, for energy level E0,3 :
E0,3 E0,0 4( 0 0,3 ) 0 13.31
(79)
0,3 0.25meV
(80)
we can obtain:
On the other hand, energy levels of 2D harmonic oscillator with applying
magnetic field can be calculated from:
En,l (2n | l | 1)
1
1
( c )2 ( 0 )2 l c
4
2
(81)
where c is cyclotron frequency which can be evaluated from:
c
eB
m*
; m* 0.08me
(82)
For instance for the magnetic field B 1 T we evaluate c 1.4471meV . For our
case, we can insert n,l in eq. (81) as:
En,l (2n | l | 1)
1
1
( c ) 2 ( 0 n,l ) 2 l c
4
2
(83)
Therefore, for E0,0 we can write:
E0,0
1
1
( c )2 ( 0 )2
(1.4471)2 (4.1)2 4.1634meV
4
4
(84)
44
while for zero magnetic field, E0,0 4.1 meV which shows that with magnetic field,
energy level of s -state would be increased by 0.0634 meV .
For
p -state, l 1 ,
E0,1 2
we can write:
1
1
1
1
( c )2 ( 0 )2 c 2 (1.4471)2 (4.1)2 1.4471 9.0503
4
2
4
2
while for zero magnetic field, E0,1 8.2 , which shows that,
p -state
(85)
would be increased
by 0.8503 meV .
For
E0,2 3
wgm , l 2
we can write:
1
1
( c )2 ( 0 0,2 )2 c 3 (1.4471)2 (4.1 0.11) 2 1.4471 11.3681
4
4
(86)
while without magnetic field, E0,2 12.63 , which shows that it would be decreased by
1.2619 meV
For
wgm , l 3 ,
E0,3 4
1
1
3
( c )2 ( 0 0,3 )2 c 4 (1.4471)2 (4.1 0.25)2 1.4471 15.5684
4
4
2
(87)
For zero magnetic field E0,3 17.4 meV which shows that it is decreased by 1.8316 meV .
3.6 Experimental Result
Figure below shows experimental result for 4 meV QD. There are two close picks
between s- and p-states which are related to the WGMs. Therefore, we can predict that
these two close picks are corresponding to 2 electrons in WGM orbital, where each pick
related to one of these 2 electrons. This result is corresponding to our numerically
calculated energy spectra for 4 meV QD, Fig. 19 (a), in which 2 electrons are supposed
to be in the excited state and 4 electrons in the ground state. In Fig. 19 (a), we similarly
calculate the energy splitting between s- and p-states equal to 4 meV, and attain a WGM
between these two states. Although, these two electrons have degenerate energy levels
45
in numerical result, but in experiment, this degeneracy can be split due to the defect in
the dot. Besides, the size of the wavefunction distribution which is obtained by NearField Scanning Optical Microscopy (NSOM) is almost identical with single particle
(numerical) calculation.
Figure 21 - Experiment result of energy spectra and wavefunction distribution for 4
meV QD
3.7 Surface Modes in Lateral QD
We could achieve surface states in lateral QD, in two orthogonal directions, φand z-directions.
3.7.1 WGMs
The resonance in the φ-direction which is referred to WGMs shows that WGM
with higher angular momentum has larger effective length of the QD. Figure 22 shows
WGMs with different angular momentums, in which the radius size of the resonance is
increased for higher angular momentums.
46
Figure 22 – WGMs from left to right, top: m=3, m=5, bottom: m=7, m=9.
3.7.2 Resonance across the Height
For each of the angular momentums (m), it is possible to achieve different modes
of distribution along the height of the QD. Figure 23 shows these modes for m=7, which
are related to 5th, 7th, 9th and 11th eigenvalues.
47
Figure 23 - Wavefunctions of QD for m=7 ; from left to right, top: 5th, 7th, bottom: 9th,
11th eigenfunctions
For 6 meV QD, for m=0, quantum number associated to the height, starts to
change from 7th eigenvalue, while for 4 meV QD, it is 6th eigenvalue. Generally
speaking, with increaing the s-p splitting, resonances across the height occur in a higher
number of eigenstates. Figure 24 shows surface states of 10 meV QD which can exist
only for m=0 (7th and 9th eigenvalues), m=1 (7th and 9th eigenvalues), m=2 (7th
eigenvalue) and m=3 (7th eigenvalue). The interesting feature in this figure is that the
confinement of the distribution in the QD is reduced which can be attributed to the both
approaching the eigenvalues to the applied voltage, and also decreasing the height of
QD.
48
Figure 24 - Surface states of 6 meV QD; from left to right, top: 7th (m=0), 9th (m=0),
7th (m=1), bottom: 9th (m=1), 7th (m=2) , 7th (m=3) eigenfunctions
3.8 Perturbation
3.8.1 Lateral QD
Figure 25 shows that the perturbation which interfere a state can change it,
otherwise it would be unaffected. This figure shows the comparison of three modes of
surface states between unperturbed and perturbed QD, for 5th eigenvalue of m=0,1, 2
(unperturbed dot) and 6th eigenvalue of m=0, 5th eigenvalue of m=1,2 (perturbed dot).
49
Figure 25 - Wavefunctions of 4 meV QD; from left to right, top (unperturbd): 5th
(m=0), 5th (m=1), 5th (m=2), bottom (perturbed): 6th (m=0), 5th (m=1), 5th (m=2)
eigenfunctions
It shows that the first mode which is mostly affected by perturbation is changed
considerably, however, the other two modes are changed a little. The perturbation at the
center of the dot leads the height of QD be decreased which cause the surface state for
m=0 occur at a higher eigenvalue.
3.8.2 Spherical QD
Figure 26 shows that smooth deformation along the surface keep the surface
states unchanged. This figure is related to the 1st, 2nd and 3rd eigenvalues of angular
momentum m=10, for both spherical and deformed spherical dot, which shows that
distribution and also the eigenvalues are almost identical in these dots. However, for
higher order modes, due to the rapidly changing of the distribution along the surface, the
deformation would change the states.
50
Figure 26 - Wavefunctions of spherical QD for first three eigenmodes of m=10, top:
unperturbed, bottom: perturbed
3.8.3. Triangular QD
Figure 27 shows that by changing the geometry of the QD, we can handle the
distribution of the electrons in the dot. This figure is related to the first three
eigenmodes of angular momentum m=10 for the dots with the vertex at symmetrical and
also unsymmetrical positions. It shows that electrons tend to concentrate at the vertex of
these dot. Besides, in the unsymmetrical one, the distribution of electrons are more
likely along the surface.
51
Figure 27 - Wavefunctions of triangular QD for first three eigenmodes of m=10, top:
symmetrical vertex, bottom: unsymmetrical vertex
52
Conclusion
In this thesis, we study WGMs in Quantum Dots (QDs). In lateral QD the Coulomb
interaction between the electrons plays a significant role in its energy spectra. We reveal
that Coulomb interaction can be comparable to the interband transition energy, which
cause some higher energy levels fall between the two lowest energy levels s- and pstates. Furthermore, some resonances along the height of QD are detected which are
unusual in these dots. We reveal the perturbation and topological effect on the surface
states in these dots as well as in spherical and triangular dots.
In these dots WGMs with higher angular momentums shows larger effective
lengths in the QD. Resonances along the height of these dots show less confinement in
the dot, with decreasing the height of the dot. It is shown that perturbation can affect the
local distributions, while the non-local states would be unaffected. Smooth perturbation
in spherical QD keep the surface states unaffected. Furthermore, surface states can be
manipulated by changing the location of the vertex, in triangular dots.
53
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